Nobuyoshi Koshida, Tokyo University of Agriculture and Technology, Japan “More Silicon－Deep in the Nanovalley－“
Satoshi Kondo, Japan Society of Newer Metals, Japan “Current status and future challenges of semi-conductor grade silicon material industries in Japan“
Keynote Speakers
Hiroyuki Matsunami, Kyoto University, Japan “Progress in Power Semiconductor SiC and Future Prospect“
Naoto Horiguchi, Interuniversity Microelectronics Centre, Belgium “Future CMOS device scaling by atomic-scale interface control“
Invited speakers
Aaron Voon-Yew Thean, National University of Singapore, Singapore “Materials Engineering of Oxide Semiconductors and 2D Materials for Novel Memory-Centric 3D-Integrated Circuits“
Giovanni Capellini, Innovations for High Performance Microelectronics – Leibniz Institute for High Performance Microelectronics, Germany, and Roma Tre University, Italy “Complex Ge/SiGe heterostructures for quantum cascade laser application“
Daniel Abou-Ras, Helmholtz-Zentrum Berlin, Germany “Interfaces in thin-film solar cells“
Inga Anita Fischer, Brandenburg University of Technology Cottbus-Senftenberg, Germany “Thin Sn films on Ge: From 2D to 3D growth“
Norio Terada, Kagoshima University, Japan “Depth directional profiles of electronic structure in chalcogenide absorber-based solar cells“
Reika Ichihara, Kioxia Corporation, Japan “Quantitative analysis of charge trap and de-trap in HfO2-FeFET and their impacts on memory performances“
Takashi Tokumasu, Tohoku University, Japan “Reactive Force-Field Molecular Dynamics and DFT Simulations for the Thin Film Growth by CVD and ALD Techniques“
Takayuki Harada, National Institute for Materials Science, Japan “Polar interfaces of a high-conductivity layered oxide PdCoO2 and wide-bandgap semiconductors“
Takuma Kobayashi, Osaka University, Japan “Control of defects at the SiC/SiO2 interface for SiC MOS devices“