Plenary Speakers

  • Nobuyoshi Koshida, Tokyo University of Agriculture and Technology, Japan “More Silicon-Deep in the Nanovalley-
  • Satoshi Kondo, Japan Society of Newer Metals, Japan “Current status and future challenges of semi-conductor grade silicon material industries in Japan

Keynote Speakers

  • Hiroyuki Matsunami, Kyoto University, Japan “Progress in Power Semiconductor SiC and Future Prospect
  • Naoto Horiguchi, Interuniversity Microelectronics Centre, Belgium “Future CMOS device scaling by atomic-scale interface control

Invited speakers

  • Aaron Voon-Yew Thean, National University of Singapore, Singapore “Materials Engineering of Oxide Semiconductors and 2D Materials for Novel Memory-Centric 3D-Integrated Circuits
  • Giovanni Capellini, Innovations for High Performance Microelectronics – Leibniz Institute for High Performance Microelectronics, Germany, and Roma Tre University, Italy “Complex Ge/SiGe heterostructures for quantum cascade laser application
  • Daniel Abou-Ras, Helmholtz-Zentrum Berlin, Germany “Interfaces in thin-film solar cells
  • Inga Anita Fischer, Brandenburg University of Technology Cottbus-Senftenberg, Germany “Thin Sn films on Ge: From 2D to 3D growth
  • Norio Terada, Kagoshima University, Japan “Depth directional profiles of electronic structure in chalcogenide absorber-based solar cells
  • Reika Ichihara, Kioxia Corporation, Japan “Quantitative analysis of charge trap and de-trap in HfO2-FeFET and their impacts on memory performances
  • Takashi Tokumasu, Tohoku University, Japan “Reactive Force-Field Molecular Dynamics and DFT Simulations for the Thin Film Growth by CVD and ALD Techniques
  • Takayuki Harada, National Institute for Materials Science, Japan “Polar interfaces of a high-conductivity layered oxide PdCoO2 and wide-bandgap semiconductors
  • Takuma Kobayashi, Osaka University, Japan “Control of defects at the SiC/SiO2 interface for SiC MOS devices